Flux Transmission Of Strained Band Ingaas/Gaassb Double Quantum Well Nanostructure In InP Substrate (001)

ABSTRACT

In diverse applications semiconductor materials need to be doped, sometimes to nearly degenerate levels.eg.  In applications such as thermoelectric, transparent, electronics or power electronics. However many materials with finite band gaps are not dopable at all, while others exhibit strong preference toward allowing either p-type or n-type doping, but not both. In this work, we develop a model of strained band InGaAs/GaAsSb double quantum quantum well heterostructure on InP using transfer matrice and Model solid theory. This MATLAB program model was used to obtain the transmission coefficients, reflectance coefficients, transmission currents and electron/hole mobility. These were obtained theoretically by employing experimental binary band parameters obtained from literature.