Abstract

 Group III-Nitride materials have ushered in scientific and technological breakthrough for lighting, mass data storage and high power electronic applications. Gallium Nitride (GaN) and related materials have found their suitability in blue light emitting diodes and blue laser diodes. Despite the current development, there are still technological problems that impede the performance of such devices. Quantum dots (QDs) are proposed to improve the optical and electronic properties of III-Nitride devices. Quantum confinement in a — GaxIn^xN spherical semiconductor quantum dot (QD) has been theoretically studied using the Brus Model based on the effective mass approximation and quantum confinement effects. The valence band degeneracy in T point of the Brillouin zone and the effective mass anisotropy are also taken into account. It is found that the model used for the semiconductor nanocrystal exhibit quantum size dependence predicted by the particle-in-a-box model. The optical absorption and emission intensity spectra were also investigated in order to understand the effect of alloy composition(x) on the spectra. The results show that the ground state confinement energy is largely dependent on the radius of the dot and alloy composition(x). Thus, as dot radius decreases, the confinement energy increases. Hence, confinement energies could be fine tuned by changing the radius of QDs, which play a fundamental role in the optical and electronic properties of QDs. Also, the theoretically calculated absorption and emission intensity spectra shifted towards higher energies by increasing the alloy composition(x).