ABSTRACT
CuS:ZnS, CdS:ZnS, AIS:ZnS and
SnS:ZnS multilayer thin films were synthesized on glass substrates using two
solution based methods: successive ionic layer adsorption and reaction (SILAR)
and solution growth technique(SGT). The deposited alloyed samples were annealed
between 373K and 523K using Master Chef Annealing Machine. The crystallographic
studies were done using X-ray diffractometer (XRD) and scanning electron
microscope (SEM). The XRD pattern of CuS:ZnS alloyed thin films ofsamples P5
and P6show well defined peaks. The XRD pattern of CdS:ZnS alloyed thin films of
sample Q5 show well defined peaks. The XRD pattern of AlS:ZnS alloyed thin
films of samples R1 and R6 show well defined peaks. The XRD pattern of SnS:ZnS
alloyed thin films of sample T6 show well defined peaks which reveals the
samples are polycrystalline in nature. Their grain sizes were calculated.
Rutherford backscattering spectroscopy (RBS) analysis confirmed the percentage
of the elements of copper, cadmium, aluminium, tin, zinc and sulphur in the
alloyed thin films. The surface electron microscopy result indicates the microstructure
of the deposited alloyed thin films. The optical characterization was carried
out using spectrophotometer. The spectral transmittance of samples PO, Pl, P2,
P3, and P4 show maximum transmissions of 44%, 98%, 78%, 96% and 57% at
wavelength of about 900nm throughout the studied region and band gap of 3.98eV,
4.20eV, 4.18eV, 4.21eV and 4.15eV respectively. The spectral transmittance of
samples QO, QI, Q2, Q3, and Q4 show maximum transmissions of 80%, 90%, 95%, 88%
and 97% at wavelength of about 900nm, 900nm, 400nm, 650nm and 470nm within the
studied region and band gap of 4.20eV, 4.21 eV, 4.15eV and 4.19 respectively.
The spectral transmittance of samples RO, R2, R3, R4, and R5 show maximum
transmissions of 67%, 82%, 88%, 97% and 70% at wavelength of about 900nm within
the studied region and band gap of 4.02eV, 4.20eV, 4.25eV, 4.35eV and 4.15eV
respectively. The spectral transmittance of samples TO, T2, T3, T4, and T5 show
maximum transmissions of 35%, 40%, 37%, 80% and 82% at wavelength of about
900nm within the studied region and band gap of 3.68eV, 3.8eV, 3.7eV, 3.98eV
and 3.9eV respectively. Other optical properties that were investigated are;
absorbance, reflectance, absorption coefficient, extinction coefficient,
refractive index, optical conductivity and dielectric constants. From the
qualities, these sulphide multilayer thin films may be found useful in window
coating, vulcanization, etc.
MICHAEL, U (2026). Dual Solution Synthesis and Characterization of Multilayer Sulphide Thin Films for Possible Applications:- Mgbaja Elizabeth C. Repository.mouau.edu.ng: Retrieved Apr 22, 2026, from https://repository.mouau.edu.ng/work/view/dual-solution-synthesis-and-characterization-of-multilayer-sulphide-thin-films-for-possible-applications-mgbaja-elizabeth-c-7-2
UNIVERSITY, MICHAEL. "Dual Solution Synthesis and Characterization of Multilayer Sulphide Thin Films for Possible Applications:- Mgbaja Elizabeth C" Repository.mouau.edu.ng. Repository.mouau.edu.ng, 22 Apr. 2026, https://repository.mouau.edu.ng/work/view/dual-solution-synthesis-and-characterization-of-multilayer-sulphide-thin-films-for-possible-applications-mgbaja-elizabeth-c-7-2. Accessed 22 Apr. 2026.
UNIVERSITY, MICHAEL. "Dual Solution Synthesis and Characterization of Multilayer Sulphide Thin Films for Possible Applications:- Mgbaja Elizabeth C". Repository.mouau.edu.ng, Repository.mouau.edu.ng, 22 Apr. 2026. Web. 22 Apr. 2026. < https://repository.mouau.edu.ng/work/view/dual-solution-synthesis-and-characterization-of-multilayer-sulphide-thin-films-for-possible-applications-mgbaja-elizabeth-c-7-2 >.
UNIVERSITY, MICHAEL. "Dual Solution Synthesis and Characterization of Multilayer Sulphide Thin Films for Possible Applications:- Mgbaja Elizabeth C" Repository.mouau.edu.ng (2026). Accessed 22 Apr. 2026. https://repository.mouau.edu.ng/work/view/dual-solution-synthesis-and-characterization-of-multilayer-sulphide-thin-films-for-possible-applications-mgbaja-elizabeth-c-7-2