Abstract

Group
III-Nitride materials have ushered in scientific and technological breakthrough
for lighting, mass data storage and high power electronic applications. Gallium
Nitride (GaN) and related materials have found their suitability in blue light
emitting diodes and blue laser diodes. Despite the current development, there
are still technological problems that impede the performance of such devices.
Quantum dots (QDs) are proposed to improve the optical and electronic
properties of III-Nitride devices. Quantum confinement in

Overall Rating
## 0.0

APA

MICHAEL, U (2023). Quantum Confinements In 〖α-Ga〗_x 〖In〗_(1-x) N Spherical Semiconductor Quantum Dots. Repository.mouau.edu.ng: Retrieved Jun 23, 2024, from https://repository.mouau.edu.ng/work/view/quantum-confinements-in-ga_x-in_1-x-n-spherical-semiconductor-quantum-dots-7-2

MLA 8th

UNIVERSITY, MICHAEL. "Quantum Confinements In 〖α-Ga〗_x 〖In〗_(1-x) N Spherical Semiconductor Quantum Dots" *Repository.mouau.edu.ng*. Repository.mouau.edu.ng, 21 Jun. 2023, https://repository.mouau.edu.ng/work/view/quantum-confinements-in-ga_x-in_1-x-n-spherical-semiconductor-quantum-dots-7-2. Accessed 23 Jun. 2024.

MLA7

UNIVERSITY, MICHAEL. "Quantum Confinements In 〖α-Ga〗_x 〖In〗_(1-x) N Spherical Semiconductor Quantum Dots". *Repository.mouau.edu.ng*, Repository.mouau.edu.ng, 21 Jun. 2023. Web. 23 Jun. 2024. < https://repository.mouau.edu.ng/work/view/quantum-confinements-in-ga_x-in_1-x-n-spherical-semiconductor-quantum-dots-7-2 >.

Chicago

UNIVERSITY, MICHAEL. "Quantum Confinements In 〖α-Ga〗_x 〖In〗_(1-x) N Spherical Semiconductor Quantum Dots" Repository.mouau.edu.ng (2023). Accessed 23 Jun. 2024. https://repository.mouau.edu.ng/work/view/quantum-confinements-in-ga_x-in_1-x-n-spherical-semiconductor-quantum-dots-7-2