ABSTRACT
CuS:ZnS, CdS:ZnS, AlS:ZnS and SnS:ZnS multilayer thin films were synthesized
on glass substrates using two solution based methods: successive ionic layer
adsorption and reaction (SILAR) and solution growth technique(SGT). The
deposited alloyed samples were annealed between 373K and 523K using Master Chef
Annealing Machine. The crystallographic studies were done using X-ray
diffractometer (XRD) and scanning electron microscope (SEM). The XRD pattern of
CuS:ZnS alloyed thin films of samples P5 and P6show well defined peaks. The XRD
pattern of CdS:ZnS alloyed thin films of sample Q5 show well defined peaks. The
XRD pattern of AlS:ZnS alloyed thin films of samples R1 and R6 show well
defined peaks. The XRD pattern of SnS:ZnS alloyed thin films of sample T6 show
well defined peaks which reveals the samples are polycrystalline in nature.
Their grain sizes were calculated. Rutherford backscattering spectroscopy (RBS)
analysis confirmed the percentage of the elements of copper, cadmium,
aluminium, tin, zinc and sulphur in the alloyed thin films. The surface electron
microscopy result indicates the microstructure of the deposited alloyed thin
films. The optical characterization was carried out using spectrophotometer.
The spectral transmittance of samples P0, P1, P2, P3, and P4 show maximum
transmissions of 44%, 98%, 78%, 96% and 57% at wavelength of about 900nm
throughout the studied region and band gap of 3.98eV, 4.20eV, 4.18eV, 4.21eV
and 4.15eV respectively. The spectral transmittance of samples Q0, Q1, Q2, Q3,
and Q4 show maximum transmissions of 80%, 90%, 95%, 88% and 97% at wavelength
of about 900nm, 900nm, 400nm, 650nm and 470nm within the studied region and
band gap of 4.20eV, 4.21eV, 4.15eV and 4.19 respectively. The spectral
transmittance of samples R0, R2, R3, R4, and R5 show maximum transmissions of
67%, 82%, 88%, 97% and 70% at wavelength of about 900nm within the studied
region and band gap of 4.02eV, 4.20eV, 4.25eV, 4.35eV and 4.15eV respectively. The
spectral transmittance of samples T0, T2, T3, T4, and T5 show maximum
transmissions of 35%, 40%, 37%, 80% and 82% at wavelength of about 900nm within
the studied region and band gap of 3.68eV, 3.8eV, 3.7eV, 3.98eV and 3.9eV
respectively. Other optical properties that were investigated are; absorbance,
reflectance, absorption coefficient, extinction coefficient, refractive index,
optical conductivity and dielectric constants. From the qualities, these
sulphide multilayer thin films may be found useful in window coating, vulcanization,
etc.
ELIZABETH, C (2023). Dual Solution Synthesis And Characterization Of Multilayer Sulphide Thin Films For Possible Applications. Repository.mouau.edu.ng: Retrieved Nov 23, 2024, from https://repository.mouau.edu.ng/work/view/dual-solution-synthesis-and-characterization-of-multilayer-sulphide-thin-films-for-possible-applications-7-2
CHINYERE, ELIZABETH. "Dual Solution Synthesis And Characterization Of Multilayer Sulphide Thin Films For Possible Applications" Repository.mouau.edu.ng. Repository.mouau.edu.ng, 02 Jun. 2023, https://repository.mouau.edu.ng/work/view/dual-solution-synthesis-and-characterization-of-multilayer-sulphide-thin-films-for-possible-applications-7-2. Accessed 23 Nov. 2024.
CHINYERE, ELIZABETH. "Dual Solution Synthesis And Characterization Of Multilayer Sulphide Thin Films For Possible Applications". Repository.mouau.edu.ng, Repository.mouau.edu.ng, 02 Jun. 2023. Web. 23 Nov. 2024. < https://repository.mouau.edu.ng/work/view/dual-solution-synthesis-and-characterization-of-multilayer-sulphide-thin-films-for-possible-applications-7-2 >.
CHINYERE, ELIZABETH. "Dual Solution Synthesis And Characterization Of Multilayer Sulphide Thin Films For Possible Applications" Repository.mouau.edu.ng (2023). Accessed 23 Nov. 2024. https://repository.mouau.edu.ng/work/view/dual-solution-synthesis-and-characterization-of-multilayer-sulphide-thin-films-for-possible-applications-7-2